Carrier leakage in 1.3 μm SCH quantum well lasers
S. Hausser, C. Harder, et al.
ISLC 1992
Using a novel single-step molecular beam epitaxy growth technology on nonplanar substrates, we report on the successful integration of an InGaAs / AlGaAs laser amplifier with a 4-mm-long passive waveguide cavity and a QW modula-tor. Lasing action of the entire structure was achieved by a current of 60 mA flowing through the amplifier section. Mode-locking experiments applying an RF signal to the modulator segment led to nearly transform-limited pulses with a duration of 4.4 ps and a time-bandwidth product of 0.43. © 1993 IEEE.
S. Hausser, C. Harder, et al.
ISLC 1992
P. Guéret, E. Marclay, et al.
Solid State Communications
M. Heiblum, K. Seo, et al.
Physical Review Letters
H.A.J.M. Reinen, T.T.J.M. Berendschot, et al.
Superlattices and Microstructures