T.H. Ning, C.M. Osburn, et al.
Applied Physics Letters
Paper
TP-A1 Shallow-Level Electron Traps in SiO2
Abstract
No abstract available.
Related
Conference paper
Technologies to further reduce soft error susceptibility in SOI
P. Oldiges, R.H. Dennard, et al.
IEDM 2009
T.H. Ning, C.M. Osburn, et al.
Applied Physics Letters
Conference paper
A high performance low temperature 0.3 μm CMOS on SIMOX
G. Shahidi, B. Bucclot, et al.
VLSI Technology 1992