Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
I derive a new analytic expression for the critical threshold current needed to switch a single-domain magnet by means of the transfer of spin momentum from a static magnet. It is the first such expression which takes significant account of the electron structure of the constituent ferromagnets. It is valid for a class of pillar compositions and geometries commonly used in experiments. © 2003 Elsevier B.V. All rights reserved.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
K.A. Chao
Physical Review B
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