Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Recent x-ray absorption measurements have indicated that the interface between the antiferromagnetic (AF) and the ferromagnetic (FM) layers in AF/FM bilayers instead of being abrupt, consists of a thin layer with uncompensated spins. Here the effect of an interfacial layer between the AF and FM layers on the ferromagnetic resonance response is investigated using a three-layer model for the exchange anisotropy. The calculated dependence of the resonance field with the azimuthal angle of the in-plane external field agrees quite well with experimental data in several samples, lending support to the existence of the uncompensated interfacial layer.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME