K.N. Tu
Materials Science and Engineering: A
The rate equations for carriers injected into an amorphous semiconductor are considered for a simple model with radiative recombination of injected electron and holes and with emission and absorption of optical phonons of a single energy. The approximate energy dependence of the rate coefficients is calculated for a model of the band tail states. A steady-state solution of the rate equations is compared with experimental results for luminescence and photoconductivity in amorphous As2Te2Se. © 1972.
K.N. Tu
Materials Science and Engineering: A
A. Reisman, M. Berkenblit, et al.
JES
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Ming L. Yu
Physical Review B