John G. Long, Peter C. Searson, et al.
JES
The rate equations for carriers injected into an amorphous semiconductor are considered for a simple model with radiative recombination of injected electron and holes and with emission and absorption of optical phonons of a single energy. The approximate energy dependence of the rate coefficients is calculated for a model of the band tail states. A steady-state solution of the rate equations is compared with experimental results for luminescence and photoconductivity in amorphous As2Te2Se. © 1972.
John G. Long, Peter C. Searson, et al.
JES
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
R. Ghez, J.S. Lew
Journal of Crystal Growth