P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
The formation of the rectifying Schottky barrier on metal-semiconductor interfaces is one of the longest standing problems of solid-state physics. We present a review of the models and theories for Schottky barrier. Two important examples of metal-semiconductor interfaces, namely those containing simple and alkali metals, are analyzed in order to evaluate these models and theories in the light of ab-initio calculations. © 1991.
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
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