R. Ghez, J.S. Lew
Journal of Crystal Growth
Formulae are obtained which show that when the residual resistivity of a metal lies in the range, 100-200μΩ-cm, where the temperature coefficient of resistivity α becomes zero (Mooij Criterion), the electron mean free path, the weak field coherence length and the Fermi wavelength are approximately equal. Arguments are made to show that the concept of weak localization must break down at the resistivity where the α≈0. In degenerate semiconductors these formulae predict the residual resistivity at which the Hall mobility is a maximum and where the negative magneto- resistivity, associated with weak localization, increases rapidly. © 1982.
R. Ghez, J.S. Lew
Journal of Crystal Growth
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