Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
This note reviews magnetotransport data on the magnetic semiconductor Gd-xvxS4 (v = vacancy). New data on the metallic side of the transition are presented. The results for two samples may be summarized as follows: 1) At low temperatures (T ∼ 10 mK) the conductivity, σ(0) ∝ (H Hc), where Hc is a critical field below which the material is an insulator; 2) for the sample with the larger critical field, the data are not consistent with variable range hopping: 3) for H/Hc ≳ 1, the temperature dependence deviates only little from a √T law. © 1985.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano