J.Z. Sun
Journal of Applied Physics
This note reviews magnetotransport data on the magnetic semiconductor Gd-xvxS4 (v = vacancy). New data on the metallic side of the transition are presented. The results for two samples may be summarized as follows: 1) At low temperatures (T ∼ 10 mK) the conductivity, σ(0) ∝ (H Hc), where Hc is a critical field below which the material is an insulator; 2) for the sample with the larger critical field, the data are not consistent with variable range hopping: 3) for H/Hc ≳ 1, the temperature dependence deviates only little from a √T law. © 1985.
J.Z. Sun
Journal of Applied Physics
J.A. Barker, D. Henderson, et al.
Molecular Physics
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics