Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Digital computer calculations in SCF MO approximation on the ground state of BeH from 2.0 a.u. out to dissociation are reported. There are two MO solutions differing in the forms, energies, and populations of the 2σ and 3σ MO's. One (1σ22σ23σ) minimizes the energy out to 4.26 a.u., the other (1σ22σ'3σ'2) at larger values. Copyright © 1971 John Wiley & Sons, Inc.
T.N. Morgan
Semiconductor Science and Technology
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals