H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Paper
The electronic structure of impurities and defects in SiO2
Abstract
We describe a simple tight-binding model which gives qualitative understanding and quantitative estimates of the electronic energy levels of several classes of impurities, defects and impurity complexes in SiO2. © 1982.
Related
Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications