S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Paper
The electronic structure of impurities and defects in SiO2
Abstract
We describe a simple tight-binding model which gives qualitative understanding and quantitative estimates of the electronic energy levels of several classes of impurities, defects and impurity complexes in SiO2. © 1982.
Related
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters