Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Current, voltage, temperature (I-V-T) and conductance, voltage, temperature (G-V-T) as well as switching time measurements have been made on the switching states of bistable amorphous niobium pentoxide films. The measurements are indicative of a charge transfer mechanism occurring prior to switching. I-V-T and G-V-T measurements on the switching states for temperatures in the range 1.3 to 4.2°K as well as at 77°K are discussed. © 1972.
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Julien Autebert, Aditya Kashyap, et al.
Langmuir
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials