Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Current, voltage, temperature (I-V-T) and conductance, voltage, temperature (G-V-T) as well as switching time measurements have been made on the switching states of bistable amorphous niobium pentoxide films. The measurements are indicative of a charge transfer mechanism occurring prior to switching. I-V-T and G-V-T measurements on the switching states for temperatures in the range 1.3 to 4.2°K as well as at 77°K are discussed. © 1972.
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
T.N. Morgan
Semiconductor Science and Technology
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters