R. Ghez, J.S. Lew
Journal of Crystal Growth
Current, voltage, temperature (I-V-T) and conductance, voltage, temperature (G-V-T) as well as switching time measurements have been made on the switching states of bistable amorphous niobium pentoxide films. The measurements are indicative of a charge transfer mechanism occurring prior to switching. I-V-T and G-V-T measurements on the switching states for temperatures in the range 1.3 to 4.2°K as well as at 77°K are discussed. © 1972.
R. Ghez, J.S. Lew
Journal of Crystal Growth
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020