P.J. Ding, W.A. Lanford, et al.
Nuclear Inst. and Methods in Physics Research, B
Calculations are made of the rates at which bursts of electronic charge are created in silicon by cosmic rays at sea level. These rates are reduced to two types: point charge bursts and distributed ionization wake bursts. A procedure is shown to evaluate the soft fail rates of simple devices caused by cosmic rays. It is shown that an 8-M byte semiconductor memory made of 10×10 μm diodes will have a soft fail rate of about one per day.
P.J. Ding, W.A. Lanford, et al.
Nuclear Inst. and Methods in Physics Research, B
J.F. Ziegler, G.W. Cole, et al.
Journal of Applied Physics
J.F. Ziegler, R.F. Lever
Applied Physics Letters
W.K. Chu, B.L. Crowder, et al.
Applied Physics Letters