Pei-I. Wang, S.P. Murarka, et al.
JES
Calculations are made of the rates at which bursts of electronic charge are created in silicon by cosmic rays at sea level. These rates are reduced to two types: point charge bursts and distributed ionization wake bursts. A procedure is shown to evaluate the soft fail rates of simple devices caused by cosmic rays. It is shown that an 8-M byte semiconductor memory made of 10×10 μm diodes will have a soft fail rate of about one per day.
Pei-I. Wang, S.P. Murarka, et al.
JES
J.W. Mayer, J.F. Ziegler, et al.
Journal of Applied Physics
U. Littmark, J.F. Ziegler
Physical Review A
J.F. Ziegler
Nuclear Instruments and Methods