Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
We have examined the role of constraints on carrier flow on electron-hole scattering of minority carriers. In a bipolar transistor, in which the flow of majority carrier current normal to the junction potential barriers is usually negligible, the effect of electron-hole scattering is less than would be inferred from measurements of transport in p-i-n diodes or in the Shockley-Haynes experiment. In addition, as a result of the momentum transferred fromthe minority carriers to the majority carriers, an electric field is developed which enhances the flow of minority carriers, particularly at high injection levels. © 1985.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Revanth Kodoru, Atanu Saha, et al.
arXiv
J. Tersoff
Applied Surface Science
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures