H. Booyens, J.H. Basson, et al.
Journal of Applied Physics
Paper
The application of elastobirefringence to the study of strain fields and dislocations in III-V compounds
Abstract
The basic relations between the strain fields in III-V crystals and their elastobirefringence transmission properties are derived. The results are applied in an analysis of the contrast phenomena observed in III-V crystals containing misfitting epitaxial structures as well as the contrast features due to dislocations using visible and infrared birefringence.