Temperature dependent transport measurements on strained Si/Si_1-xGe_x resonant tunneling devices

Temperature dependent transport through strained Si/SiGe hole resonant tunneling diodes has been studied. A quantitative measure of the different current components due to the conduction through the light hole and heavy hole resonant states at any particular bias and temperature has been obtained, and energy values for states in the SiGe well have been extracted. We also show that the quenching of the negative differential resistance at room temperature in hole resonant tunneling diodes is due to thermally assisted tunneling through higher resonant states.