D.G. Carlson, E. Mosekilde, et al.
Journal of Applied Physics
Relatively good GaAs solar cells can be made from poor-quality substrates by making the junction deep (≳1 μ) instead of shallow and by "leaching" both the pGaAs and nGaAs regions during the growth process. AM0 efficiencies of 14.7% (19% AM1) have been obtained from substrates with starting substrate diffusion lengths of 0.6 μ.
D.G. Carlson, E. Mosekilde, et al.
Journal of Applied Physics
A.W. Kleinsasser, T.N. Jackson, et al.
IEEE T-ED
M.R. Lorenz, W. Reuter, et al.
Applied Physics Letters
C.L. Lin, M.O. Aboelfotoh, et al.
IEDM 1993