H.J. Hovel
Materials and Design
Relatively good GaAs solar cells can be made from poor-quality substrates by making the junction deep (≳1 μ) instead of shallow and by "leaching" both the pGaAs and nGaAs regions during the growth process. AM0 efficiencies of 14.7% (19% AM1) have been obtained from substrates with starting substrate diffusion lengths of 0.6 μ.
H.J. Hovel
Materials and Design
Alan C. Warren, J. Woodall
ECS Meeting 1989
C.J. Anderson, J.H. Magerlein, et al.
GaAs IC 1987
C. Lanza, H.J. Hovel
IEEE T-ED