C.W. Wilmsen, P.D. Kirchner, et al.
Journal of Applied Physics
Relatively good GaAs solar cells can be made from poor-quality substrates by making the junction deep (≳1 μ) instead of shallow and by "leaching" both the pGaAs and nGaAs regions during the growth process. AM0 efficiencies of 14.7% (19% AM1) have been obtained from substrates with starting substrate diffusion lengths of 0.6 μ.
C.W. Wilmsen, P.D. Kirchner, et al.
Journal of Applied Physics
A. Paccagnella, A.C. Callegari, et al.
IEEE T-ED
A. Ajmera, J. Sleight, et al.
VLSI Technology 1999
Haizhou Yin, Z. Ren, et al.
ICSICT 2006