Conference paper
Development of stacking faults in strained silicon layers
S.W. Bedell, A. Reznicek, et al.
IEEE International SOI Conference 2005
Relatively good GaAs solar cells can be made from poor-quality substrates by making the junction deep (≳1 μ) instead of shallow and by "leaching" both the pGaAs and nGaAs regions during the growth process. AM0 efficiencies of 14.7% (19% AM1) have been obtained from substrates with starting substrate diffusion lengths of 0.6 μ.
S.W. Bedell, A. Reznicek, et al.
IEEE International SOI Conference 2005
J. Woodall, H. Rupprecht, et al.
IEEE T-ED
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Applied Physics Letters
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Physical Review B