SILICIDE CONTACT AND GATE IN MICROELECTRONIC DEVICES.
K.N. Tu
International Symposium on Methods and Materials in Microelectronic Technology 1982
We have investigated the effect of annealing polycrystalline YBa 2Cu3O7-δ samples in a He ambient and in vacuum, on the composition of their internal surfaces. X-ray photoelectron spectroscopy (XPS) data indicate a decrease in the amount of BaCO3 but a higher proportion of Ba at the near-surface region upon low-temperature annealing in He or vacuum. The latter effect seems to derive from the presence of a surface barrier for oxygen outdiffusion, and can be prevented by diffusing Ag into the polycrystalline sample. Changes in the cutoff energies of the ultraviolet photoelectron spectra indicate that a submonolayer coverage of Ag is sufficient to produce a change in the work function of 0.3 eV, corresponding to the lowering of the surface barrier.
K.N. Tu
International Symposium on Methods and Materials in Microelectronic Technology 1982
K.N. Tu, G.V. Chandrashekhar, et al.
Thin Solid Films
T.M. Shaw, D. Dimos, et al.
Journal of Materials Research
B.S. Lim, W.C. Pritchet, et al.
Journal of Applied Physics