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SPIE Advances in Semiconductors and Superconductors 1990
The mechanism by which crystals grow from the flux is normally by layers spreading from screw-dislocation sources, forming growth hillocks. Alternative mechanisms are not uncommon and twin domains have been found to provide the dominant growth centres in some rare-earth aluminate crystals, in which the angle between twins is only of the order of 1°. Other factors such as edge nucleation and the mutual influence of adjacent crystal faces are also discussed. © 1973.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Michiel Sprik
Journal of Physics Condensed Matter
Robert W. Keyes
Physical Review B