J.A. Barker, D. Henderson, et al.
Molecular Physics
Paper
Superlattice umklapp processes in resonant Raman scattering
Abstract
Umklapp resonant Raman scattering by LO phonons is observed in GaAsGa1-xAlxAs superlattices as a result of minizone formation in the conduction and valence bands. The scattering mechanism involves the wavevector dependent Fröhlich-type electron-phonon interaction. © 1978.
Related
J.C. Marinace
JES
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
Conference paper
Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007