William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Scanning tunneling microscopy and spectroscopy reveal at least a two-stage reaction process which occurs at adatom sites on Si(111)7×7 surfaces exposed to oxygen. Reacted adatoms in the first stage have small (1/2 eV) but specific electron-energy shifts, and show roughly a 4 preference for the faulted half and a 2 preference for the corners of the 7×7 unit cell. Second-stage adatoms appear similar to missing adatoms in empty-state topographic images. © 1990 The American Physical Society.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
J. Tersoff
Applied Surface Science
J.C. Marinace
JES
A. Reisman, M. Berkenblit, et al.
JES