Conference paper
RAPID ANNEALING OF SILICON.
R.T. Hodgson, V.R. Deline, et al.
MRS Proceedings 1983
The structure of tilt grain boundaries formed by a rotation of 60°and 30°about a 〈111〉 axis has been examined by transmission electron microscopy. In specimens containing 30°boundaries, low-angle dislocation arrays with a tilt angle of 2.2°are commonly observed. This is attributed to the presence of a coincidence site lattice relation at 27.8°. © 1972 The American Institute of Physics.
R.T. Hodgson, V.R. Deline, et al.
MRS Proceedings 1983
C. Cai, Alan Lien, et al.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
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Applied Physics Letters