Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
The Ge(111)-c(2×8) and the Si(111)-(7×7) reconstructions are directly compared by medium-energy ion scattering. The c(2×8) surface is shown to induce considerably less atomic displacements than the (7×7) structure. The data are in good agreement with a simple adatom model for the c(2×8) reconstructed surface. © 1988 The American Physical Society.
T.N. Morgan
Semiconductor Science and Technology
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
M.A. Lutz, R.M. Feenstra, et al.
Surface Science