Julien Autebert, Aditya Kashyap, et al.
Langmuir
The energetics and electronic structure of lattice-matched (Ge)4/(GaAs)2 and strained, pseudomorphic (Si)4/(GaAs)2 (001) semiconductor superlattices have been studied with use of a self-consistent-field pseudopotential method. The interfaces are assumed to be uniform, but the interlayer distances of the pseudomorphic lattice are optimized to achieve a minimum-total-energy configuration. The calculated enthalpy of formation is in the 100-meV/atom range for these two superlattices, which is almost an order of magnitude larger than the strain component in (Si)4/(GaAs)2. The superlattice dipole induces a metal-insulator transition by periodically tilting the potential. The electrostatic energy derived from this dipole field is the main cause of the instability relative to disproportionation. © 1991 The American Physical Society.
Julien Autebert, Aditya Kashyap, et al.
Langmuir
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
J.H. Stathis, R. Bolam, et al.
INFOS 2005