Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Scanning tunneling microscopy measurements across isolated straight step edges on a Cu(111) surface were carried out for biases between 100 mV and 5 V. In addition to the well known surface state oscillations, and at lower sample bias than the onset of the two-dimensional surface image state, a sharply defined linear protrusion, was observed at the top of the step faces. This linear feature is interpreted as a one-dimensional image state at the step, with its energy modified by a dipolar potential whose appearance is attributed to Smoluchowski smoothing of the electron density at the step edge. © 2003 The American Physical Society.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Julien Autebert, Aditya Kashyap, et al.
Langmuir
T.N. Morgan
Semiconductor Science and Technology