Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
Evaluation of the magnetic gaps of the (TMTTF) and (TCNQ) stacks with the help of the temperature dependence of the measured g-values leads to the conclusion that the (TCNQ) stack is driving the metal-insulator transition. The relative sizes of the magnetic gaps on the (TMTTF) and (TCNQ) stacks are compatible with the existence of only one phase transition. A comparison with (TTF)(TCNQ) is made and the lower transition temperature observed for (TMTTF)(TCNQ) is in agreement with the smaller gap observed in this compound for the (TNNQ) stack. © 1976.
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
K.N. Tu
Materials Science and Engineering: A
John G. Long, Peter C. Searson, et al.
JES