Chih-Chao Yang, Fen Chen, et al.
IITC 2012
For the first time, we report a spatial mapping methodology to directly obtain spatial BD distributions from TDDB data at wafer-scales. The results reveal BD defects are strongly clustered towards later stress times and explain the root-cause of non-Poisson area-scaling in agreement with recently developed time-dependent clustering model [3,4]. This methodology provides important detailed information for process diagnosis and improvement as well as realistic reliability assessment in future technologies as variability issues continue to rise.
Chih-Chao Yang, Fen Chen, et al.
IITC 2012
Baozhen Li, Andrew Kim, et al.
IRPS 2018
Miaomiao Wang, Sufi Zafar, et al.
Microelectronic Engineering
Youngseok Kim, Soon-Cheon Seo, et al.
IEEE Electron Device Letters