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Technical Digest-International Electron Devices Meeting
A general formula is obtained for the electron density per unit area associated with the quasilevel in a symmetrical resonant tunneling heterostructure. The relation of this quantum-mechanical electron accumulation to the time dependence of conduction is discussed. © 1988 The American Physical Society.
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
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Chemistry of Materials