Ronald L. Jones, Eric K. Lin, et al.
International Conference on Characterization and Metrology for ULSI Technology 2005
High-volume fabrication of nanostructures, which required nondestructive metrologies capable of measuring not only the pattern shape profile but also the pattern size, was discussed. A small angle x-ray scattering (SAXS) based technique has the capability of characterizing the pattern width and average pitch size to subnanometer precision. A modeling-free protocol to extract cross-section information was also reported. Reciprocal space positions and diffraction peak intensities were measured while the sample was rotated around the axis perpendicular to the grating direction. It was found that the linear extrapolations of peak positions in reciprocal space allowed a precise determination of both the pattern height and the sidewall angle.
Ronald L. Jones, Eric K. Lin, et al.
International Conference on Characterization and Metrology for ULSI Technology 2005
Dario L. Goldfarb, Qinhuang Lin, et al.
Proceedings of SPIE - The International Society for Optical Engineering
Bryan D. Vogt, Christopher L. Soles, et al.
Langmuir
Joseph L. Lenhart, Ronald L. Jones, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures