S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
The site and nature of the bonding of H at a Ti (0001) surface are established via the analysis of new angle-resolved photoemission measurements by self-consistent electronic-structure calculations. Experimentally observed H-induced surface states are identified with calculated bonding and antibonding combinations of H 1s and Ti 3d, 4s orbitals. The positions of these levels are strongly dependent on local bonding geometry. The H site which minimizes the total energy gives a very good account of the observed spectrum. Ignoring the total energy leads to a more ambiguous structure determination. © 1980 The American Physical Society.
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Hiroshi Ito, Reinhold Schwalm
JES
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS