A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Singlet exciton surface processes have been investigated in phenanthrene single crystals with neat crystal surfaces and photo-oxidized surfaces. It is shown that two different surface conditions can be achieved experimentally; namely, an exciton quenching and a non-quenching surface. A quantitative analysis of the observed exciton quenching effect yields a singlet exciton diffusion length of 1380 Å. © 1976.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials