Conference paper
113-GHz f T graded-base SiGe HBTs
E.F. Crabbé, B. Mcyerson, et al.
Device Research Conference 1993
SiGe-on-insulator material was fabricated by wafer bonding and hydrogen-induced layer transfer techniques. The transferred SiGe layer is strain relaxed and has a Ge content ranging from 15% to 25%. High-quality strained Si layers were grown on the SiGe-on-insulator substrates by the UHV/ chemical vapor deposition process at 550 °C. An electron mobility of 40 000cm2/Vs in a modulation-doped Si/SiGe heterostructure was achieved at 30 K on a SiGe-on-insulator substrate. © 2001 American Institute of Physics.
E.F. Crabbé, B. Mcyerson, et al.
Device Research Conference 1993
Huiling Shang, E. Gousev, et al.
ICSICT 2004
J.R. Heath, R.S. Williams, et al.
Journal of Physical Chemistry
S. Malhotra, D. Canaperi, et al.
AMC 2004