A.R. Sitaram, D.W. Abraham, et al.
VLSI Technology 2003
We show that shape anisotropy can be used to control the response characteristics of magnetic tunnel junctions. By varying the junction shape, the resistance versus field curve was made to vary from a nonhysteretic linear curve with a high-field sensitivity (0.3%/Oe) to a hysteretic response curve with high squareness. © 1997 American Institute of Physics.
A.R. Sitaram, D.W. Abraham, et al.
VLSI Technology 2003
J.Z. Sun, W.J. Gallagher, et al.
Applied Physics Letters
S. Rishton, Y. Lu, et al.
Microelectronic Engineering
J.Z. Sun, W.J. Gallagher, et al.
Applied Physics Letters