L.L. Chang, L. Esaki
Applied Physics Letters
Paper
Semiconductor superlattices by MBE and their characterization
Abstract
The deposition of semiconductor superlattices of GaAs-Ga1-x AlxAs and In1-xGaxAs-GaSb1-yAsy by molecular beam epitaxy is described. Their evaluations by high-energy electron diffraction and X-ray measurement are presented. Properties obtained from transport, optical and magneto experiments are summarized to characterize the electronic subband structure. © 1981.
Related
Y. Guldner, J.P. Vieren, et al.
Physical Review Letters
C.Y. Fong, J.S. Nelson, et al.
Physical Review B
L. Esaki
International Conference on the Dynamics of Interfaces 1983