Conference paper
Stress-driven segregation at a Si-Ge alloy surface
J. Tersoff, P.C. Kelires
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
A theoretical model for step flow growth of multilayer films was investigated taking into account the interlayer step-step interaction induced by misfit strain. The model is used to simulate the growth of strain-compensated short-period superlattices. The improvement of step-bunch ordering in successive layers leads to self-organized growth of a lattice of quantum wires. The method is useful for fabricating quantum-wire superlattice and also effectively avoids dislocation formation.
J. Tersoff, P.C. Kelires
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
K.W. Schwarz, J. Tersoff
Physical Review Letters
J. Tersoff
Physica E: Low-Dimensional Systems and Nanostructures
J. Tersoff
Physical Review B