A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Self-diffusion measurements over the temperature range 247-352°C have been made on single-crystal Au films of 2-μ thickness grown epitaxially onto (001) MgO substrates, using Au195 radioactive tracer and rf sputter-etching techniques for serial sectioning. The penetration profiles revealed shallow lattice diffusion and a much deeper tracer penetration down dislocations; the former is significantly enhanced by diffusion in dislocations. The activation energy Qd and the combined preexponential factor AdDd0 for self-diffusion along dislocations are found to be 1.16 ± 0.02 eV and 5 × 10-16 cm4/sec, respectively. From the enhanced lattice diffusion observed in the first stage of the penetration profiles, a dislocation density of ∼1011 lines/cm2 could also be evaluated for the single-crystal films. The data compare well with other fcc metals and appear to favor a vacancy diffusion mechanism. © 1973 The American Physical Society.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
A. Gangulee, F.M. D'Heurle
Thin Solid Films