Conference paper
Roughness analysis of Si1-xGex films
R.M. Feenstra, M.A. Lutz, et al.
MRS Fall Meeting 1994
Paper
Selective desorption of interfacial SiO2
Abstract
The selective thermal decomposition of silica from a silicate/silicon (001) interface without silicidation of the dielectric was reported. The electrical characteristics of silicate/silicon interfaces were studied. The intriguing consequence of the relative stability of metal-oxide compounds was discussed. It was shown that after initial silicate formation excess of interfacial silica is decomposed.
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