Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Schottky barrier probe tunneling is reviewed as a method for measuring gaps in the electronic density of states of exotic materials. Although there have been notable successes, the Schottky barrier itself is found to produce an intrinsic zero bias resistance peak, which limits the usefulness to strong, well-defined gaps. © 1985.
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Sung Ho Kim, Oun-Ho Park, et al.
Small