David B. Mitzi
Journal of Materials Chemistry
Schottky barrier probe tunneling is reviewed as a method for measuring gaps in the electronic density of states of exotic materials. Although there have been notable successes, the Schottky barrier itself is found to produce an intrinsic zero bias resistance peak, which limits the usefulness to strong, well-defined gaps. © 1985.
David B. Mitzi
Journal of Materials Chemistry
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
Ming L. Yu
Physical Review B
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering