A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Schottky barrier probe tunneling is reviewed as a method for measuring gaps in the electronic density of states of exotic materials. Although there have been notable successes, the Schottky barrier itself is found to produce an intrinsic zero bias resistance peak, which limits the usefulness to strong, well-defined gaps. © 1985.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
T. Schneider, E. Stoll
Physical Review B
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010