Ellen J. Yoffa, David Adler
Physical Review B
Schottky barrier probe tunneling is reviewed as a method for measuring gaps in the electronic density of states of exotic materials. Although there have been notable successes, the Schottky barrier itself is found to produce an intrinsic zero bias resistance peak, which limits the usefulness to strong, well-defined gaps. © 1985.
Ellen J. Yoffa, David Adler
Physical Review B
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Julien Autebert, Aditya Kashyap, et al.
Langmuir