Copper contact metallization for 22 nm and beyond
Soon-Cheon Seo, Chih-Chao Yang, et al.
IITC 2009
Conventional planar transistors have been used throughout the semiconductor industry for the past several decades. Further miniaturization of conventional devices has been proven to be a significant challenge and thus the industry has transitioned to Planar Fully Depleted FETs and FinFETs. As we look out at technologies beyond 7nm node there are many barriers which appear to limit the scalability of FinFETs. Therefore it is important to consider the device architecture options that can serve as a replacement and enable further scaling to meet future technology requirements. This invited talk discusses the scalability of Fully Depleted FETs and FinFETs and also proposes options to enable continued scaling beyond 7nm node.
Soon-Cheon Seo, Chih-Chao Yang, et al.
IITC 2009
Rajiv V. Joshi, Keunwoo Kim, et al.
IEEE Transactions on VLSI Systems
Ishita Jain, Anshul Gupta, et al.
IEEE T-ED
Veeraraghvan S. Basker, Theodorus E. Standaert, et al.
VLSI Technology 2010