Conference paperA 24-to-30GHz 256-Element Dual-Polarized 5G Phased Array with Fast Beam-Switching Support for >30,000 BeamsBodhisatwa Sadhu, Arun Paidimarri, et al.ISSCC 2022
Conference paperA 73.9-83.5GHz synthesizer with -111dBc/Hz phase noise at 10MHz offset in a 130nm SiGe BiCMOS technologyJean-Olivier Plouchart, Mark Ferriss, et al.RFIC 2013
PaperA 24–30 GHz Power Amplifier with >20-dBm Psat and <0.1-dB AM-AM Distortion for 5G Applications in 130-nm SiGe BiCMOSChihiro Kamidaki, Yuma Okuyama, et al.IEICE Transactions on Electronics
Conference paperA 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applicationsJohn J. Pekarik, Jim Adkisson, et al.BCTM 2014
