Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
It is shown that itinerant electrons in a nanostructure have the property, in a resonance energy range, that the wavefunctions exhibiting a resonance peak all have substantially the same position dependence within the 'quantum dot'. In the resonance energy range, they differ only by a Lorentzian function of energy including a phase factor. Consequently, for electron states with parallel spins there should be an exchange cancellation of their Coulomb interaction.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Mark W. Dowley
Solid State Communications