Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The resistance of wires consisting of 1-3 atoms connecting two semi-infinite metallic electrodes is calculated for both small and large bias. The wires discussed consist of Al atoms, with one of the Al atoms substituted by S in certain cases. The resistances obtained are in the range 7-∼30 kΩ. For the three-atom wire, the value of the resistance when the S atom is present depends on the order of the atoms in the wire. When the S is an end atom, the resistance at larger bias also shows a dependence on polarity (diode behavior). These studies involve a self-consistent calculation of the electron density distribution for the entire electrode/wire system. © 1995 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
P.C. Pattnaik, D.M. Newns
Physical Review B