J.D. Swalen, G.C. Bjorklund, et al.
Optical and Optoelectronic Applied Science and Engineering 1990
Paper
Reading and writing of photochemical holes using GaAlAs-diode lasers
Abstract
A current-tuned GaAlAs-diode laser is utilized both to burn and to detect narrow photochemical holes in the inhomogeneously broadened 833-nm zero-phonon line of the R’ color center in LiF. Applications for reading and writing data into frequency-domain optical memories based on photochemical hole burning are discussed. © 1983 Optical Society of America.
Related
W.E. Moerner, P. Pokrowsky, et al.
Physical Review B
W.E. Moerner, Taras Plakhotnik, et al.
Journal of Physical Chemistry
W.E. Moerner, T.P. Carter
Physical Review Letters