Conference paperPRESSURE DEPENDENCE OF NEAR-EDGE (5 K) RECOMBINATION IN HIGH-PURITY III-V MATERIALS.D.J. Wolford, H. Mariette, et al.Gallium Arsenide and Related Compounds 1984
PaperTime decays of donor-bound excitons in GaAs under pressure-induced-X crossoverH. Mariette, D.J. Wolford, et al.Physical Review B
PaperExciton transfer at low temperature in GaxIn1-xP:N and GaAs1-xPx:NH. Mariette, J.A. Kash, et al.Physical Review B
PaperGrowth of epitaxial films of CdTe and (Cd,Mn)Te on GaAs substratesT. Siegrist, Armin Segmüller, et al.Applied Physics Letters
