Radiation-induced band bending on GaAs(110)

UHV cleaved GaAs(110) surfaces were irradiated by unmonochromatized UV - radiation from gas discharge sources and by X-rays. A band bending up to 0.6 eV was observed after irradiation with He II, Ne II and Mg Kα, whereas no such effect occurred after He I and Ne I irradiation. The band bending increases with time to a saturation level that depends on the irradiation intensity. The effect occurred for n- and p-type samples with different doping materials and concentrations. © 1989.