R. Ghez, J.S. Lew
Journal of Crystal Growth
Photoemission secondary-electron energy distributions and yield measurements for (100) EuO show that "quasielastic" rather than inelastic electron scattering dominates the photoemission escape process for electrons excited within a few eV of threshold. In this "quasielastic" scattering regime (with a large effective escape depth ∼ 50-100), it is suggested that the spin polarization need not be conserved in the photoemission escape process, and that reported "paramagnetic" spin-polarized photoemission at 10 °K is possibly due to quasielastic spin-flip scattering. © 1973 The American Physical Society.
R. Ghez, J.S. Lew
Journal of Crystal Growth
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
Ming L. Yu
Physical Review B
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures