E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Quantum wells consisting of a single InAs layer confined between two AlSb layers were made. and they exhibited characteristic two-dimensional electron behavior from magneto-transport measurements. Unexpectedly, the electrons appeared to be predominantly extrinsic in nature. unlike the situation in the InAs-GaSb system. © 1984.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Michiel Sprik
Journal of Physics Condensed Matter
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering