Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A formulation of the Hall effect in a strongly disordered system is presented, employing a Landauer-type picture. With use of this expression, the Hall effect and the magnetoconductance of a small, strongly disordered system of the type used by Nguyen, Spivak, and Shklovskii are analyzed, and a condition is derived for quantized values of the former. © 1986 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics