M. Faucher, P.O. Jubert, et al.
Supercond Sci Technol
Paper
Probing depth of threshold photoemission electron microscopy
Abstract
Probing depth of threshold photoemission electron microscopy was discussed. Photon excitation energies of 5 eV were studied. The mechanism responsible for bulk sensitivity was also studied. It was found that the probing depth is of 16.2 nm.
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