PaperPreparation and properties of solution-grown epitaxial p - N junctions in gapM.R. Lorenz, M.H. PilkuhnJournal of Applied Physics
PaperIntra- and interband free-carrier absorption and the fundamental absorption edge in n-type InPW.P. Dumke, M.R. Lorenz, et al.Physical Review B
PaperRotational levels of shallow acceptor states: The undulation spectra of N in GaPT.N. Morgan, M.R. Lorenz, et al.Physical Review Letters