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VLSI Technology 2012
The works examines the power adaptive control of back-gated planar transistor employing a novel super-self-alignment design. The availability of such back-gate provides additional freedom for the improvement of the transistor performance of higher switching speed and lower power consumption. Both of these two capabilities are investigated through the studies of transistor's output and transfer characteristics. © World Scientific Publishing Company.
Sungjae Lee, J. Johnson, et al.
VLSI Technology 2012
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IEEE Electron Device Letters
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